The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing
Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4867091 |