Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs
A novel nanoscale fully depleted strained-SOI TFET (FD-SSOI TFET) is proposed and exhaustively simulated through Atlas Device Simulator. It is found that FD-SSOI TFET has the potential of improved on-current and steep subthreshold swing. Furthermore, the effect of strain and dimension on the thresho...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/850383 |