The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

In this paper, the reaction rate of oxygen vacancy (VO) by the derivatives of threshold voltage (Vth) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental...

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Main Authors:	Ya-Hsiang Tai, Han-Wen Liu, Po-Chun Chan
Format:	Article
Language:	English
Published:	IEEE 2019-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) reaction rate illumination effect multiple-pulse illumination response time
Online Access:	https://ieeexplore.ieee.org/document/8491384/

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spelling	doaj-a298394c1f6a4bc4a539e364494a819a2021-03-29T18:48:21ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-017333710.1109/JEDS.2018.28759308491384The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film TransistorsYa-Hsiang Tai0Han-Wen Liu1Po-Chun Chan2https://orcid.org/0000-0002-4963-945XDepartment of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electrical Engineering, Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung, TaiwanDepartment of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, TaiwanIn this paper, the reaction rate of oxygen vacancy (VO) by the derivatives of threshold voltage (Vth) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental results, a comprehensive model named VO pool is proposed. The proposed model can more universally describe the characteristic of VO reacting to the light and its degradation behavior under various kinds of stress condition.https://ieeexplore.ieee.org/document/8491384/Amorphous indium gallium zinc oxide (a-IGZO)thin-film transistors (TFTs)reaction rateillumination effectmultiple-pulse illuminationresponse time
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Ya-Hsiang Tai Han-Wen Liu Po-Chun Chan
spellingShingle	Ya-Hsiang Tai Han-Wen Liu Po-Chun Chan The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors IEEE Journal of the Electron Devices Society Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) reaction rate illumination effect multiple-pulse illumination response time
author_facet	Ya-Hsiang Tai Han-Wen Liu Po-Chun Chan
author_sort	Ya-Hsiang Tai
title	The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors
title_short	The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors
title_full	The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors
title_fullStr	The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors
title_full_unstemmed	The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors
title_sort	vacancy pool model for amorphous in-ga-zn-o thin-film transistors
publisher	IEEE
series	IEEE Journal of the Electron Devices Society
issn	2168-6734
publishDate	2019-01-01
description	In this paper, the reaction rate of oxygen vacancy (VO) by the derivatives of threshold voltage (Vth) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental results, a comprehensive model named VO pool is proposed. The proposed model can more universally describe the characteristic of VO reacting to the light and its degradation behavior under various kinds of stress condition.
topic	Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) reaction rate illumination effect multiple-pulse illumination response time
url	https://ieeexplore.ieee.org/document/8491384/
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The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

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