Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction Phototransistors

Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction Phototransistors

We study the effect of temperature and doping in Si-based GeSn heterojunction phototransistors (HPTs) for low-power-consuming, low-cost, and high-speed mid-infrared (MIR) applications. The incorporation of Ge<sub>1-x</sub>Sn<sub>x</sub> alloy in the base of our HPTs significa...

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Bibliographic Details
Main Authors: Harshvardhan Kumar, Rikmantra Basu, Guo-En Chang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Photonics Journal
Subjects:
Cut-off frequency
doping
GeSn alloy
heterojunction phototransistor (HPT)
responsivity
temperature
Online Access:https://ieeexplore.ieee.org/document/9099040/

Internet

https://ieeexplore.ieee.org/document/9099040/

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