Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy

Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy

For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration. In this study, a rapid and non-destructive approach...

Full description

Bibliographic Details
Main Authors: Ying Song, Zongwei Xu, Tao Liu, Mathias Rommel, Hong Wang, Yufang Wang, Fengzhou Fang
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Crystals
Subjects:
depth profiling
confocal raman spectroscopy
silicon carbide
lopc mode (longitudinal optical phonon-plasmon coupled mode)
Online Access:https://www.mdpi.com/2073-4352/10/2/131

Internet

https://www.mdpi.com/2073-4352/10/2/131

Similar Items