Influence of the ab-initio calculation parameters on prediction of energy of point defects in silicon
Point defects play a key role in many microelectronics technologies. Knowledge of the properties of point defects and characteristics of their behavior during ion-beam synthesis of microstructures for use in silicon devices allows one to optimize the conditions of their production, improve their qua...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2015-12-01
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| Series: | Modern Electronic Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177916000037 |