Influence of the ab-initio calculation parameters on prediction of energy of point defects in silicon
Point defects play a key role in many microelectronics technologies. Knowledge of the properties of point defects and characteristics of their behavior during ion-beam synthesis of microstructures for use in silicon devices allows one to optimize the conditions of their production, improve their qua...
Main Authors: | Mariya G. Ganchenkova, Irina A. Supryadkina, Karine K. Abgaryan, Dmitriy I. Bazhanov, Ilya V. Mutigullin, Vladimir A. Borodin |
---|---|
Format: | Article |
Language: | English |
Published: |
Pensoft Publishers
2015-12-01
|
Series: | Modern Electronic Materials |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177916000037 |
Similar Items
-
Point Defects in Silicon and Silicon-Carbide
by: Pellegrino, Paolo
Published: (2001) -
An examination of point defects and atomic diffusion in silicon
by: Monson, Tyrus K.
Published: (2012) -
Amino acids interacting with defected carbon nanotubes: ab initio calculations
by: M. Darvish Ganji
Published: (2016-09-01) -
Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon
by: Doolittle, William Alan
Published: (2007) -
The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon
by: Kulinich O. A., et al.
Published: (2008-10-01)