Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n+-Si...

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Bibliographic Details
Main Authors: Bilel Azeza, Mohamed Helmi Hadj Alouane, Bouraoui Ilahi, Gilles Patriarche, Larbi Sfaxi, Afif Fouzri, Hassen Maaref, Ridha M’ghaieth
Format: Article
Language:English
Published: MDPI AG 2015-07-01
Series:Materials
Subjects:
III-V materials for solar cells
Si substrate
molecular beam epitaxy
solar cell
Online Access:http://www.mdpi.com/1996-1944/8/7/4544

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http://www.mdpi.com/1996-1944/8/7/4544

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