Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In<sub>0.53</sub>Ga<sub>0.47</sub>As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> for Low-Power Logic Applications

Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In<sub>0.53</sub>Ga<sub>0.47</sub>As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> for Low-Power Logic Applications

We created tri-gate sub-100 nm In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with a bi-layer Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> gate stack and investigated the scaling effects on...

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Bibliographic Details
Main Author: Tae-Woo Kim
Format: Article
Language:English
Published: MDPI AG 2019-12-01
Series:Electronics
Subjects:
tri-gate in<sub>0.53</sub>ga<sub>0.47</sub>as mosfet
electrostatic immunity
drain-induced-barrier-lowering (dibl), constant voltage stress (cvs), equivalent-oxide thickness (eot)
Online Access:https://www.mdpi.com/2079-9292/9/1/29

Internet

https://www.mdpi.com/2079-9292/9/1/29

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