The correlation between parameters of gallium arsenic epitaxy layers and technology of growth’s process
The correlation between mobility and carriers concentration and growth’s conditions of gallium arsenic layers by liquid phase epitaxy is established. It is possible to obtain layers with required mobility and concentration of charge carriers by changing of technology parameters of growth’s process....
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2009-10-01
|
| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2009/5_2009/pdf/11.zip |