Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes
Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 oC for up to 60 hours in vacuum was carried to further improve the contact...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4985841 |