Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes
Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 oC for up to 60 hours in vacuum was carried to further improve the contact...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2017-12-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4985841 |