Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Metamaterial memory devices often require a large stimulus to switch states or suffer from poor thermal stability. Here, the authors fabricate a terahertz metadevice driven by ferroelectric and graphene layers, and obtain multiple level memory devices stable at room temperature.

Bibliographic Details
Main Authors: Woo Young Kim, Hyeon-Don Kim, Teun-Teun Kim, Hyun-Sung Park, Kanghee Lee, Hyun Joo Choi, Seung Hoon Lee, Jaehyeon Son, Namkyoo Park, Bumki Min
Format: Article
Language:English
Published: Nature Publishing Group 2016-01-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms10429