Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
Metamaterial memory devices often require a large stimulus to switch states or suffer from poor thermal stability. Here, the authors fabricate a terahertz metadevice driven by ferroelectric and graphene layers, and obtain multiple level memory devices stable at room temperature.
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2016-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/ncomms10429 |
| Summary: | Metamaterial memory devices often require a large stimulus to switch states or suffer from poor thermal stability. Here, the authors fabricate a terahertz metadevice driven by ferroelectric and graphene layers, and obtain multiple level memory devices stable at room temperature. |
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| ISSN: | 2041-1723 |