Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
Metamaterial memory devices often require a large stimulus to switch states or suffer from poor thermal stability. Here, the authors fabricate a terahertz metadevice driven by ferroelectric and graphene layers, and obtain multiple level memory devices stable at room temperature.
Main Authors: | Woo Young Kim, Hyeon-Don Kim, Teun-Teun Kim, Hyun-Sung Park, Kanghee Lee, Hyun Joo Choi, Seung Hoon Lee, Jaehyeon Son, Namkyoo Park, Bumki Min |
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Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2016-01-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/ncomms10429 |
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