Synthesis of Ge<sub>1−x</sub>Sn<sub>x</sub> Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates

Synthesis of Ge<sub>1−x</sub>Sn<sub>x</sub> Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates

In this work, nanocrystalline Ge<sub>1&#8722;x</sub>Sn<sub>x</sub> alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid t...

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Bibliographic Details
Main Authors: Hadi Mahmodi, Md Roslan Hashim, Tetsuo Soga, Salman Alrokayan, Haseeb A. Khan, Mohamad Rusop
Format: Article
Language:English
Published: MDPI AG 2018-11-01
Series:Materials
Subjects:
semiconductors
thin films
Ge-Sn
nanocrystalline
sputtering
Raman spectroscopy
scanning electron microscopy
X-ray diffraction
Online Access:https://www.mdpi.com/1996-1944/11/11/2248

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https://www.mdpi.com/1996-1944/11/11/2248

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