Seebeck Coefficient of SOI Layer Induced by Phonon Transport

The Seebeck coefficient of a patterned Si wire on P-doped SOI (Si-on-insulator) layer with a carrier concentration of 1018 cm-3 was measured near room temperature. The Seebeck coefficient is found to be smaller than that in the SOI layer and to be closer to the calculated Seebeck coefficient includi...

Full description

Bibliographic Details
Main Authors: Faiz Salleh, Takuro Oda, Yuhei Suzuki, Yoshinari Kamakura, Hiroya Ikeda
Format: Article
Language:English
Published: Universitas Indonesia 2015-04-01
Series:Makara Journal of Technology
Subjects:
Online Access:http://journal.ui.ac.id/technology/journal/article/view/3022