Schottky Barrier Height Engineering in <italic>&#x03B2;</italic>-Ga<sub>2</sub>O<sub>3</sub> Using SiO<sub>2</sub> Interlayer Dielectric

Schottky Barrier Height Engineering in <italic>&#x03B2;</italic>-Ga<sub>2</sub>O<sub>3</sub> Using SiO<sub>2</sub> Interlayer Dielectric

This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of &#x03B2;-Ga<sub>2</sub>O<sub>3</sub> by insertion of an ultra-thin SiO<sub>2</sub> dielectric interlayer at the metal-semiconductor junction, which can po...

Full description

Bibliographic Details
Main Authors: Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh, Saurav Roy, Michael A. Scarpulla, Kelvin G. Lynn, Sriram Krishnamoorthy
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Gallium oxide
Schottky contact
metal-insulater-semiconductor
Fermi-level pinning
power device
Online Access:https://ieeexplore.ieee.org/document/9000596/

Internet

https://ieeexplore.ieee.org/document/9000596/

Similar Items