Nonvolatile Electrochemical Metallization Memory Based on Nanocrystalline La<sub>2</sub>O<sub>3</sub> Solid Electrolyte Thin Film

Nonvolatile Electrochemical Metallization Memory Based on Nanocrystalline La<sub>2</sub>O<sub>3</sub> Solid Electrolyte Thin Film

Nanocrystalline La<sub>2</sub>O<sub>3</sub> thin films are deposited on Pt/Ti/SiO<sub>2</sub>/Si substrate by reactive radio frequency magnetron sputtering. The Ag/La<sub>2</sub>O<sub>3</sub>/Pt devices exhibit reversible bipolar resistance...

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Bibliographic Details
Main Authors: Hongbin Zhao, Hailing Tu, Feng Wei, Yuhua Xiong, Jun Du
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
nanocrystalline La2O3 thin films
conductive filaments
resistance change
electrochemical metallization memories (ECM)
resistance random access memory (RRAM)
Online Access:https://ieeexplore.ieee.org/document/7066936/

Internet

https://ieeexplore.ieee.org/document/7066936/

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