Pt/GaN Schottky Diode for Propene (C3H6) Gas Sensing

Pt/GaN Schottky diode based gas sensors were fabricated and characterized for their sensitivity towards propene (C3H6) at high operating temperatures. The GaN epitaxial layer was deposited onto sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Current-voltage (I-V) characterist...

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Bibliographic Details
Main Authors: M. SHAFIEI, K. KALANTAR-ZADEH, M. KOCAN, G. PARISH, J. ANTOSZEWSKI, L. FARAONE, W. WLODARSKI
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2008-11-01
Series:Sensors & Transducers
Subjects:
GaN
Online Access:http://www.sensorsportal.com/HTML/DIGEST/november_08/P_349.pdf