Effects of the Boron-Doped p+ Emitter on the Efficiency of the n-Type Silicon Solar Cell
The optimum structure of the p+ emitter for the n-type silicon solar cell was determined with the simulation of the boron doping concentration. The boron concentration (NB) in the p+ emitter was varied in the range of 1×1017 and 2×1022 atoms/cm3 while maintaining the base doping concentration at 2×1...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2013-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2013/974507 |