A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration
<p>Abstract</p> <p>The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III–V power devices and optical devices. We have developed a simple wet chemical et...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2010-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-010-9601-6 |