Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations
A half SRAM cell with strained Si nanowire complementary tunnel-FETs (TFETs) was fabricated and characterized to explore the feasibility and functionality of 6T-SRAM based on TFETs. Outward-faced n-TFETs are used as access-transistors. Static measurements were performed to determine the SRAM butterf...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8335289/ |