K-Band Hetero-Stacked Differential Cascode Power Amplifier with High Psat and Efficiency in 65 nm LP CMOS Technology
A K-band complementary metal-oxide-semiconductor (CMOS) differential cascode power amplifier is designed with the thin-oxide field effect transistor (FET) common source (CS) stage and thick-oxide FET common gate (CG) stage. Use of the thick-oxide CG stage affords the high supply voltage to 3.7 V and...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-04-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/8/890 |