Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

Abstract A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a two-step cooling process is taken. Through analyzing, we found that the formation...

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Bibliographic Details
Main Authors: Shuangtao Liu, Jing Yang, Degang Zhao, Desheng Jiang, Jianjun Zhu, Feng Liang, Ping Chen, Zongshun Liu, Yao Xing, Liyuan Peng, Liqun Zhang
Format: Article
Language:English
Published: SpringerOpen 2019-08-01
Series:Nanoscale Research Letters
Subjects:
Single InGaN layer
In quantum dots
In-rich layer
Online Access:http://link.springer.com/article/10.1186/s11671-019-3095-7

Internet

http://link.springer.com/article/10.1186/s11671-019-3095-7

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