Recent Advances in β-Ga2O3–Metal Contacts

Recent Advances in β-Ga2O3–Metal Contacts

Abstract Ultra-wide bandgap beta-gallium oxide (β-Ga2O3) has been attracting considerable attention as a promising semiconductor material for next-generation power electronics. It possesses excellent material properties such as a wide bandgap of 4.6–4.9 eV, a high breakdown electric field of 8 MV/cm...

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Bibliographic Details
Main Authors: Ya-Wei Huan, Shun-Ming Sun, Chen-Jie Gu, Wen-Jun Liu, Shi-Jin Ding, Hong-Yu Yu, Chang-Tai Xia, David Wei Zhang
Format: Article
Language:English
Published: SpringerOpen 2018-08-01
Series:Nanoscale Research Letters
Subjects:
β-Ga2O3
Contacts
Metal stacks
Intermediate semiconductor layer
Online Access:http://link.springer.com/article/10.1186/s11671-018-2667-2

Internet

http://link.springer.com/article/10.1186/s11671-018-2667-2

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