Noncontact laser control of electric-physical parameters of semiconductor layers
Non-contact non-destructive laser-interferometric methods for measuring several electrophysical parameters of semiconductor and dielectric layers are proposed. They are the lifetime of charge carriers for electrons and holes separately; parameters of recombination centers, namely their concentration...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Saint-Petersburg Mining University
2018-06-01
|
| Series: | Zapiski Gornogo Instituta |
| Subjects: | |
| Online Access: | http://pmi.spmi.ru/index.php/pmi/article/view/7800 |