Noncontact laser control of electric-physical parameters of semiconductor layers
Non-contact non-destructive laser-interferometric methods for measuring several electrophysical parameters of semiconductor and dielectric layers are proposed. They are the lifetime of charge carriers for electrons and holes separately; parameters of recombination centers, namely their concentration...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
Saint-Petersburg Mining University
2018-06-01
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Series: | Zapiski Gornogo Instituta |
Subjects: | |
Online Access: | http://pmi.spmi.ru/index.php/pmi/article/view/7800 |