Orders-of-magnitude enhancement in conductivity tuning in InGaZnO thin-film transistors via SiNx passivation and dual-gate modulation

The mobility of pristine amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is insufficient to meet the requirement of the future ultra-high-definition displays. Reported herein is the fabrication of hydrogenated long-channel IGZO TFTs exhibiting a transconductance and an on/o...

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Bibliographic Details
Main Authors: ChangDong Chen, ChenNing Liu, JiWen Zheng, GongTan Li, Shan Li, Qian Wu, Jin Wu, Chuan Liu
Format: Article
Language:English
Published: Taylor & Francis Group 2019-07-01
Series:Journal of Information Display
Subjects:
Online Access:http://dx.doi.org/10.1080/15980316.2019.1649729