High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp<sub>2</sub>Mg fl...

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Bibliographic Details
Main Authors: Jin-Ji Dai, Thi Thu Mai, Ssu-Kuan Wu, Jing-Rong Peng, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Han-Chieh Ho, Wei-Fan Wang
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Nanomaterials
Subjects:
GaN material
Mg doping
MOCVD
Hall measurement
PL spectroscopy
Online Access:https://www.mdpi.com/2079-4991/11/7/1766

Internet

https://www.mdpi.com/2079-4991/11/7/1766

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