Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

Improved performance in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by incorporating Ba into insulator/SiC interfaces was investigated by using a combination of the Hall effect and split capacitance-voltage measurements. It was found that a moderate annealing temperature caus...

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Bibliographic Details
Main Authors: Eigo Fujita, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Format: Article
Language:English
Published: AIP Publishing LLC 2018-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5034048

Internet

http://dx.doi.org/10.1063/1.5034048

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