Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering

Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering

Based on the engineering of the TiN capping layer, the tailoring of the crystalline phases and the paraelectric(PE)/antiferroelectric(AFE)/ferroelectric(FE) properties of nanoscale ZrO2 thin films are demonstrated without any post-annealing treatment. The capping by the TiN layer leads to the conver...

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Bibliographic Details
Main Authors: Chun-Yuan Wang, Chin-I Wang, Sheng-Han Yi, Teng-Jan Chang, Chun-Yi Chou, Yu-Tung Yin, Makoto Shiojiri, Miin-Jang Chen
Format: Article
Language:English
Published: Elsevier 2020-10-01
Series:Materials & Design
Subjects:
Antiferroelectricity and ferroelectricity
Atomic layer deposition
Phase transformation
Zirconium oxide and titanium nitride
Capping layer effect
Online Access:http://www.sciencedirect.com/science/article/pii/S0264127520305554

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http://www.sciencedirect.com/science/article/pii/S0264127520305554

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