Analysis of BDMOS and DTMOS Current Mirrors in 130 nm CMOS Technology
In this paper, an analysis of basic Current Mirror (CM) topologies was performed with a focus on comparison of conventional realization to Bulk-Driven (BD) and Dynamic-Threshold (DT) equivalents, in terms of main properties. These circuits were designed in 130 nm CMOS technology using the supply vol...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
VSB-Technical University of Ostrava
2018-01-01
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| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/2747 |