Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition

Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition

Abstract We developed a Joule heating decomposition (JHD) method, which applied direct current on the SiC for the epitaxial growth of multi-layer graphene (MLG) films on Si-terminated (0001) face of the high doping 4H-SiC substrate. By this JHD method, the growth time for preparing MLG was only seve...

Full description

Bibliographic Details
Main Authors: Zhiwei Zhang, Weiwei Cai, Rongdun Hong, Dingqu Lin, Xiaping Chen, Jiafa Cai, Zhengyun Wu
Format: Article
Language:English
Published: SpringerOpen 2018-07-01
Series:Nanoscale Research Letters
Subjects:
Carbon materials
Semiconductors
Raman
Online Access:http://link.springer.com/article/10.1186/s11671-018-2606-2

Internet

http://link.springer.com/article/10.1186/s11671-018-2606-2

Similar Items