Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane re...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2015-07-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1424-8220/15/7/17036 |