5 Watt GaN HEMT Power Amplifier for LTE
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output po...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Spolecnost pro radioelektronicke inzenyrstvi
2014-04-01
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| Series: | Radioengineering |
| Subjects: | |
| Online Access: | http://www.radioeng.cz/fulltexts/2014/14_01_0338_0344.pdf |