5 Watt GaN HEMT Power Amplifier for LTE
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output po...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Spolecnost pro radioelektronicke inzenyrstvi
2014-04-01
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Series: | Radioengineering |
Subjects: | |
Online Access: | http://www.radioeng.cz/fulltexts/2014/14_01_0338_0344.pdf |
Summary: | This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz). |
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ISSN: | 1210-2512 |