5 Watt GaN HEMT Power Amplifier for LTE

• Main Authors: K. Niotaki, A. Collado, A. Georgiadis, J. Vardakas
• Format: Article
• Language: English
• Published: Spolecnost pro radioelektronicke inzenyrstvi 2014-04-01
• Series: Radioengineering
• Subjects: ACPR; GaN HEMT; linearity; LTE; PAPR; power amplifier
• Online Access: http://www.radioeng.cz/fulltexts/2014/14_01_0338_0344.pdf

This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz).