5 Watt GaN HEMT Power Amplifier for LTE
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output po...
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Spolecnost pro radioelektronicke inzenyrstvi
2014-04-01
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Online Access: | http://www.radioeng.cz/fulltexts/2014/14_01_0338_0344.pdf |
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doaj-ab9ea572fd114fe0a0231b81131c90342020-11-24T23:00:40ZengSpolecnost pro radioelektronicke inzenyrstviRadioengineering1210-25122014-04-012313383445 Watt GaN HEMT Power Amplifier for LTEK. NiotakiA. ColladoA. GeorgiadisJ. VardakasThis work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz).www.radioeng.cz/fulltexts/2014/14_01_0338_0344.pdfACPRGaN HEMTlinearityLTEPAPRpower amplifier |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
K. Niotaki A. Collado A. Georgiadis J. Vardakas |
spellingShingle |
K. Niotaki A. Collado A. Georgiadis J. Vardakas 5 Watt GaN HEMT Power Amplifier for LTE Radioengineering ACPR GaN HEMT linearity LTE PAPR power amplifier |
author_facet |
K. Niotaki A. Collado A. Georgiadis J. Vardakas |
author_sort |
K. Niotaki |
title |
5 Watt GaN HEMT Power Amplifier for LTE |
title_short |
5 Watt GaN HEMT Power Amplifier for LTE |
title_full |
5 Watt GaN HEMT Power Amplifier for LTE |
title_fullStr |
5 Watt GaN HEMT Power Amplifier for LTE |
title_full_unstemmed |
5 Watt GaN HEMT Power Amplifier for LTE |
title_sort |
5 watt gan hemt power amplifier for lte |
publisher |
Spolecnost pro radioelektronicke inzenyrstvi |
series |
Radioengineering |
issn |
1210-2512 |
publishDate |
2014-04-01 |
description |
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz). |
topic |
ACPR GaN HEMT linearity LTE PAPR power amplifier |
url |
http://www.radioeng.cz/fulltexts/2014/14_01_0338_0344.pdf |
work_keys_str_mv |
AT kniotaki 5wattganhemtpoweramplifierforlte AT acollado 5wattganhemtpoweramplifierforlte AT ageorgiadis 5wattganhemtpoweramplifierforlte AT jvardakas 5wattganhemtpoweramplifierforlte |
_version_ |
1725641636901289984 |