Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching

Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching

Femtosecond laser sulfur hyperdoped silicon (fs-hSi) is capable of absorbing photons in the infrared spectral range while simultaneously exhibiting negligible reflection. However, laser processing creates detrimental amorphous and polycrystalline silicon surface layers impairing electronic propertie...

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Bibliographic Details
Main Authors: Simon Paulus, Patrick Mc Kearney, Friedemann Völklein, Stefan Kontermann
Format: Article
Language:English
Published: AIP Publishing LLC 2021-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0044678

Internet

http://dx.doi.org/10.1063/5.0044678

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