Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching

Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching

Femtosecond laser sulfur hyperdoped silicon (fs-hSi) is capable of absorbing photons in the infrared spectral range while simultaneously exhibiting negligible reflection. However, laser processing creates detrimental amorphous and polycrystalline silicon surface layers impairing electronic propertie...

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Main Authors: Simon Paulus, Patrick Mc Kearney, Friedemann Völklein, Stefan Kontermann
Format: Article
Language:English
Published: AIP Publishing LLC 2021-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0044678
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spelling doaj-aba3e15e6957415ba1fc75d851c82a9b2021-08-04T13:18:51ZengAIP Publishing LLCAIP Advances2158-32262021-07-01117075014075014-510.1063/5.0044678Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etchingSimon Paulus0Patrick Mc Kearney1Friedemann Völklein2Stefan Kontermann3Institute for Microtechnologies (IMtech), University of Applied Sciences RheinMain, Am Brückweg 26, D-65428 Rüsselsheim, GermanyInstitute for Microtechnologies (IMtech), University of Applied Sciences RheinMain, Am Brückweg 26, D-65428 Rüsselsheim, GermanyInstitute for Microtechnologies (IMtech), University of Applied Sciences RheinMain, Am Brückweg 26, D-65428 Rüsselsheim, GermanyInstitute for Microtechnologies (IMtech), University of Applied Sciences RheinMain, Am Brückweg 26, D-65428 Rüsselsheim, GermanyFemtosecond laser sulfur hyperdoped silicon (fs-hSi) is capable of absorbing photons in the infrared spectral range while simultaneously exhibiting negligible reflection. However, laser processing creates detrimental amorphous and polycrystalline silicon surface layers impairing electronic properties, especially reducing minority charge carrier lifetimes. This paper demonstrates how to selectively remove these disadvantageous layers by ion beam etching, while crystalline IR-absorbing silicon underneath is left. The increase in silicon crystallinity is quantified by laterally probing the fs-hSi samples with Raman spectroscopy.http://dx.doi.org/10.1063/5.0044678
collection DOAJ
language English
format Article
sources DOAJ
author Simon Paulus
Patrick Mc Kearney
Friedemann Völklein
Stefan Kontermann
spellingShingle Simon Paulus
Patrick Mc Kearney
Friedemann Völklein
Stefan Kontermann
Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching
AIP Advances
author_facet Simon Paulus
Patrick Mc Kearney
Friedemann Völklein
Stefan Kontermann
author_sort Simon Paulus
title Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching
title_short Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching
title_full Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching
title_fullStr Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching
title_full_unstemmed Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching
title_sort obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2021-07-01
description Femtosecond laser sulfur hyperdoped silicon (fs-hSi) is capable of absorbing photons in the infrared spectral range while simultaneously exhibiting negligible reflection. However, laser processing creates detrimental amorphous and polycrystalline silicon surface layers impairing electronic properties, especially reducing minority charge carrier lifetimes. This paper demonstrates how to selectively remove these disadvantageous layers by ion beam etching, while crystalline IR-absorbing silicon underneath is left. The increase in silicon crystallinity is quantified by laterally probing the fs-hSi samples with Raman spectroscopy.
url http://dx.doi.org/10.1063/5.0044678
work_keys_str_mv AT simonpaulus obtainingsimultaneouslyhighcrystallinityandsubbandgapabsorptioninfemtosecondlaserhyperdopedblacksiliconusingionbeametching
AT patrickmckearney obtainingsimultaneouslyhighcrystallinityandsubbandgapabsorptioninfemtosecondlaserhyperdopedblacksiliconusingionbeametching
AT friedemannvolklein obtainingsimultaneouslyhighcrystallinityandsubbandgapabsorptioninfemtosecondlaserhyperdopedblacksiliconusingionbeametching
AT stefankontermann obtainingsimultaneouslyhighcrystallinityandsubbandgapabsorptioninfemtosecondlaserhyperdopedblacksiliconusingionbeametching
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