Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
<p>Abstract</p> <p>Depositions on surfaces of semiconductor wafers of InP and GaN were performed from isooctane colloid solutions of palladium (Pd) nanoparticles (NPs) in AOT reverse micelles. Pd NPs in evaporated colloid and in layers deposited electrophoretically were monitored b...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
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| Online Access: | http://www.nanoscalereslett.com/content/6/1/490 |