Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

A 16-nm-L<sub>g</sub> p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for...

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Bibliographic Details
Main Authors: Jie Gu, Qingzhu Zhang, Zhenhua Wu, Jiaxin Yao, Zhaohao Zhang, Xiaohui Zhu, Guilei Wang, Junjie Li, Yongkui Zhang, Yuwei Cai, Renren Xu, Gaobo Xu, Qiuxia Xu, Huaxiang Yin, Jun Luo, Wenwu Wang, Tianchun Ye
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Nanomaterials
Subjects:
gate-all-around
Si nanowire
cryo-CMOS
one-dimensional hole transport
Online Access:https://www.mdpi.com/2079-4991/11/2/309

Internet

https://www.mdpi.com/2079-4991/11/2/309

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