DESIGN AND SIMULATION OF DRIFT-DIFFUSION AND HYDRODYNAMIC MODELS FOR AlGaN/GaN HEMTs
Gallium Nitride based HEMTs because of their peculiar material properties are widely used to realize high power, high frequency communication device and very much suitable for bio-sensing application. But to realize AlGaN/GaN HEMTs for these application many issues are remain to investigate for...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
ICT Academy of Tamil Nadu
2016-01-01
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Series: | ICTACT Journal on Microelectronics |
Subjects: | |
Online Access: | http://ictactjournals.in/paper/IJME_V1_I4_paper_1_137_140.pdf |