Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement
The refractory transition metal nitride (TMN) film Hafnium nitride (HfNx) was successfully prepared on silicon-based substrates as bottom electrodes for resistive random access memory (RRAM) cells in Pt (top)/metal oxide/ HfNx (bottom) sandwich structure. The reproducible resistive switching (RS) ch...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-03-01
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| Series: | AIP Advances |
| Online Access: | http://link.aip.org/link/doi/10.1063/1.4794687 |