Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs

Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs

We investigate the effect of random dopant fluctuation (RDF)-induced variability in n-type junctionless (JL) dual-metal gate (DMG) fin field-effect transistors (FinFETs) using a 3D computer-aided design simulation. We show that the drain voltage (VDS) has a significant impact on the electrostatic in...

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Bibliographic Details
Main Authors: Liang Dai, Weifeng Lü, Mi Lin
Format: Article
Language:English
Published: MDPI AG 2019-03-01
Series:Electronics
Subjects:
random dopant fluctuations (RDF)
junctionless (JL) FinFETs
dual-metal gate (DMG)
ratio of gate lengths
Online Access:http://www.mdpi.com/2079-9292/8/3/282

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http://www.mdpi.com/2079-9292/8/3/282

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