Investigation of Retention Noise for 3-D TLC NAND Flash Memory
In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated. Three main noise sources, consisting of essential EES (EEES), electron numbers fluctuation, and device parameters fluctuation to b...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8579606/ |