Influence of impurities and structural defects on electrophysical and detector properties of CdTe and CdZnTe
Solid-state ionizing radiation detectors based on high-resistance semiconductors can be used to monitor the safety of nuclear reactors. High-resistance CdTe and CdZnTe have very good electrophysical and detector properties. The objective of this study was to use computer simulation to determine how...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2019-12-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/journalarchive/2019_5-6/6.pdf |