Analysis of TSV-Induced Mechanical Stress and Electrical Noise Coupling in Sub 5-nm Node Nanosheet FETs for Heterogeneous 3D-ICs

Analysis of TSV-Induced Mechanical Stress and Electrical Noise Coupling in Sub 5-nm Node Nanosheet FETs for Heterogeneous 3D-ICs

Through-silicon via (TSV)-induced mechanical stress and electrical noise coupling effects on sub 5-nm node nanosheet field-effect transistors (NSFETs) were investigated comprehensively compared to fin-shaped FETs (FinFETs) using TCAD for heterogeneous 3D-ICs. TSV-induced channel length directional s...

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Bibliographic Details
Main Authors: Jinsu Jeong, Jun-Sik Yoon, Rock-Hyun Baek
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Nanosheet FETs
fin-shaped FETs
sub 5-nm node
heterogeneous 3D-ICs
through-silicon vias (TSVs)
TSV-induced mechanical stress
Online Access:https://ieeexplore.ieee.org/document/9333571/

Internet

https://ieeexplore.ieee.org/document/9333571/

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