High resolution X-ray diffraction study of proton irradiated silicon crystals
Radiation-induced modification of semiconductors is achieved by controlled introduction of intrinsic structural and impurity defects. Conventionally, introduction of radiation-induced defects is used as an efficient tool for controlling the lifetime of metastable carriers in local areas of silicon b...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2016-03-01
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| Series: | Modern Electronic Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177916300470 |