Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures

Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures

Abstract In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphene oxide (RGO) on the porous silicon (PS) layer. With the help of SEM and AFM, the formation of hybrid PS–RGO structure was confirmed. By means of current–voltage cha...

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Bibliographic Details
Main Authors: Igor B. Olenych, Olena I. Aksimentyeva, Liubomyr S. Monastyrskii, Yulia Yu. Horbenko, Maryan V. Partyka
Format: Article
Language:English
Published: SpringerOpen 2017-04-01
Series:Nanoscale Research Letters
Subjects:
Porous silicon
Reduced graphene oxide
Hybrid structure
Photosensitivity
Current–voltage characteristics
Impedance spectroscopy
Online Access:http://link.springer.com/article/10.1186/s11671-017-2043-7

Internet

http://link.springer.com/article/10.1186/s11671-017-2043-7

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