Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to over...

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Bibliographic Details
Main Authors: Umberto Celano, Andres Gomez, Paola Piedimonte, Sabine Neumayer, Liam Collins, Mihaela Popovici, Karine Florent, Sean R. C. McMitchell, Paola Favia, Chris Drijbooms, Hugo Bender, Kristof Paredis, Luca Di Piazza, Stephen Jesse, Jan Van Houdt, Paul van der Heide
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Nanomaterials
Subjects:
HfO<sub>2</sub>-based ferroelectrics
Si-doped HfO<sub>2</sub>
binary oxide ferroelectrics
atomic force microscopy
band-excitation piezoresponse force microscopy
Online Access:https://www.mdpi.com/2079-4991/10/8/1576

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https://www.mdpi.com/2079-4991/10/8/1576

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